Ground-state lasing in high-power InAs/GaAs quantum dots-in-a-well laser using active multimode interference structure.

We have designed and demonstrated InAs/GaAs quantum dots-in-a-well laser diodes for short cavities with transverse fundamental mode operation by using an active multimode interferometer (MMI) structure for the first time to the best of our knowledge. Room-temperature continuous-wave ground-state lasing at 1280 nm has been achieved with an output power of 116 mW per facet, which is 2.4 times higher than that of the conventional ridge laser diodes. By using the MMI structures, the excited-state (ES) lasing is effectively suppressed with no ES lasing, even at a high injection current of 400 mA. This device has great potential for high-power single-mode laser emission with low electric power consumption and simple fabrication processes.